AT10N65S Specs and Replacement
Type Designator: AT10N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220AB
AT10N65S substitution
- MOSFET ⓘ Cross-Reference Search
AT10N65S datasheet
Detailed specifications: AS4435S, AS4606BS, AS60N20S, AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S, 10N60, AF10N65S, AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S
Keywords - AT10N65S MOSFET specs
AT10N65S cross reference
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AT10N65S replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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