SSF10N80A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF10N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 125 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO3PF
SSF10N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF10N80A Datasheet (PDF)
ssf10n80a.pdf
Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 0.746 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
ssf10n60a.pdf
SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
ssf10n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
ssf10n65.pdf
SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n60.pdf
SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n60f.pdf
SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n90f1.pdf
SSF10N90F1Main Product Characteristics:V 900VDSSR (on) 0.85(typ.)DSI 10A DMarking and pinTO-3PSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recoveryDescription:It utilizes the latest processing techniques to achieve the high cell density a
Datasheet: SML80H14 , SML80J25 , SML80J28 , SML80J44 , SML80L27 , SML80S13 , SML80T27 , SSF10N60A , CEP83A3 , SSF10N90A , SSF17N60A , SSF22N50A , SSF25N40A , SSF45N20A , SSF4N80AS , SSF4N90AS , SSF5N80A .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918