AG12N65S MOSFET. Datasheet pdf. Equivalent

   Type Designator: AG12N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   Rise Time (tr): 115 nS
   Drain-Source Capacitance (Cd): 200 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
   Package: TO-263AB

AG12N65S Transistor Equivalent Substitute - MOSFET Cross-Reference Search