SSF10N90A Datasheet. Specs and Replacement

Type Designator: SSF10N90A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO3PF

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SSF10N90A substitution

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SSF10N90A datasheet

 ..1. Size:579K  samsung
 ssf10n90a.pdf pdf_icon

SSF10N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 6.1. Size:333K  silikron
 ssf10n90f1.pdf pdf_icon

SSF10N90A

SSF10N90F1 Main Product Characteristics V 900V DSS R (on) 0.85 (typ.) DS I 10A D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recovery Description It utilizes the latest processing techniques to achieve the high cell density a... See More ⇒

 8.1. Size:255K  fairchild semi
 ssf10n60a.pdf pdf_icon

SSF10N90A

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol... See More ⇒

 8.2. Size:577K  samsung
 ssf10n80a.pdf pdf_icon

SSF10N90A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 0.746 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

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Detailed specifications: SML80J25, SML80J28, SML80J44, SML80L27, SML80S13, SML80T27, SSF10N60A, SSF10N80A, IRFZ48N, SSF17N60A, SSF22N50A, SSF25N40A, SSF45N20A, SSF4N80AS, SSF4N90AS, SSF5N80A, SSF5N90A

Keywords - SSF10N90A MOSFET specs

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