AU2N60S Specs and Replacement
Type Designator: AU2N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-251AB
AU2N60S substitution
- MOSFET ⓘ Cross-Reference Search
AU2N60S datasheet
Detailed specifications: AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S, 2SK3878, AD2N60S, AT2N60S, AF2N60S, AK2N60S, AG2N60S, AU4N60S, AD4N60S, AT4N60S
Keywords - AU2N60S MOSFET specs
AU2N60S cross reference
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AU2N60S replacement
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