AF2N60S Specs and Replacement
Type Designator: AF2N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-220F
AF2N60S substitution
- MOSFET ⓘ Cross-Reference Search
AF2N60S datasheet
Detailed specifications: AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S, AU2N60S, AD2N60S, AT2N60S, IRF9540N, AK2N60S, AG2N60S, AU4N60S, AD4N60S, AT4N60S, AF4N60S, AK4N60S, AG4N60S
Keywords - AF2N60S MOSFET specs
AF2N60S cross reference
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AF2N60S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AGM310MA | AON6403 | AU2N60S
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