AF2N60S PDF and Equivalents Search

 

AF2N60S Specs and Replacement

Type Designator: AF2N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-220F

AF2N60S substitution

- MOSFET ⓘ Cross-Reference Search

 

AF2N60S datasheet

Detailed specifications: AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S, AU2N60S, AD2N60S, AT2N60S, IRF9540N, AK2N60S, AG2N60S, AU4N60S, AD4N60S, AT4N60S, AF4N60S, AK4N60S, AG4N60S

Keywords - AF2N60S MOSFET specs

 AF2N60S cross reference

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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