AU4N65S Specs and Replacement
Type Designator: AU4N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-251AB
AU4N65S substitution
- MOSFET ⓘ Cross-Reference Search
AU4N65S datasheet
Detailed specifications: AK2N60S, AG2N60S, AU4N60S, AD4N60S, AT4N60S, AF4N60S, AK4N60S, AG4N60S, K4145, AD4N65S, AT4N65S, AF4N65S, AK4N65S, AG4N65S, AU5N60S, AD5N60S, AT5N60S
Keywords - AU4N65S MOSFET specs
AU4N65S cross reference
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AU4N65S replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SUP90N15-18P | STF9NK90Z
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