AT4N65S Specs and Replacement
Type Designator: AT4N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-220AB
AT4N65S substitution
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AT4N65S datasheet
Detailed specifications: AU4N60S, AD4N60S, AT4N60S, AF4N60S, AK4N60S, AG4N60S, AU4N65S, AD4N65S, AON7410, AF4N65S, AK4N65S, AG4N65S, AU5N60S, AD5N60S, AT5N60S, AF5N60S, AK5N60S
Keywords - AT4N65S MOSFET specs
AT4N65S cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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