AF4N65S Specs and Replacement
Type Designator: AF4N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-220F
AF4N65S substitution
- MOSFET ⓘ Cross-Reference Search
AF4N65S datasheet
Detailed specifications: AD4N60S, AT4N60S, AF4N60S, AK4N60S, AG4N60S, AU4N65S, AD4N65S, AT4N65S, 12N60, AK4N65S, AG4N65S, AU5N60S, AD5N60S, AT5N60S, AF5N60S, AK5N60S, AG5N60S
Keywords - AF4N65S MOSFET specs
AF4N65S cross reference
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AF4N65S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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