AK4N65S PDF and Equivalents Search

 

AK4N65S Specs and Replacement

Type Designator: AK4N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO-262AB

AK4N65S substitution

- MOSFET ⓘ Cross-Reference Search

 

AK4N65S datasheet

Detailed specifications: AT4N60S, AF4N60S, AK4N60S, AG4N60S, AU4N65S, AD4N65S, AT4N65S, AF4N65S, 5N65, AG4N65S, AU5N60S, AD5N60S, AT5N60S, AF5N60S, AK5N60S, AG5N60S, AU5N65S

Keywords - AK4N65S MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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