AU5N60S Specs and Replacement
Type Designator: AU5N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-251AB
AU5N60S substitution
- MOSFET ⓘ Cross-Reference Search
AU5N60S datasheet
Detailed specifications: AK4N60S, AG4N60S, AU4N65S, AD4N65S, AT4N65S, AF4N65S, AK4N65S, AG4N65S, IRFB3607, AD5N60S, AT5N60S, AF5N60S, AK5N60S, AG5N60S, AU5N65S, AD5N65S, AT5N65S
Keywords - AU5N60S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HM50N20D
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