AU7N60S Datasheet. Specs and Replacement

Type Designator: AU7N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-251AB

AU7N60S substitution

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AU7N60S datasheet

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AU7N60S

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Detailed specifications: AG5N60S, AU5N65S, AD5N65S, AT5N65S, AF5N65S, AK5N65S, AG5N65S, AU6N70S, IRF1407, AD7N60S, AT7N60S, AF7N60S, AK7N60S, AG7N60S, AU8N60S, AD8N60S, AT8N60S

Keywords - AU7N60S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs