AG7N60S Datasheet. Specs and Replacement

Type Designator: AG7N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-263AB

AG7N60S substitution

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AG7N60S datasheet

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AG7N60S

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Detailed specifications: AK5N65S, AG5N65S, AU6N70S, AU7N60S, AD7N60S, AT7N60S, AF7N60S, AK7N60S, SI2302, AU8N60S, AD8N60S, AT8N60S, AF8N60S, AK8N60S, AG8N60S, 100N10NF, 10N50TF

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