AU8N60S Datasheet. Specs and Replacement
Type Designator: AU8N60S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60.5 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-251AB
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AU8N60S substitution
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AU8N60S datasheet
Detailed specifications: AG5N65S, AU6N70S, AU7N60S, AD7N60S, AT7N60S, AF7N60S, AK7N60S, AG7N60S, 4N60, AD8N60S, AT8N60S, AF8N60S, AK8N60S, AG8N60S, 100N10NF, 10N50TF, 11N65GS
Keywords - AU8N60S MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: WMO10N60C4 | IRF8304M | IRF7503PBF | DH060N08 | SVF4N60CAT | RUH85120S | APT904RBN
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