AT8N60S Datasheet. Specs and Replacement

Type Designator: AT8N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220AB

AT8N60S substitution

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AT8N60S datasheet

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AT8N60S

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Detailed specifications: AU7N60S, AD7N60S, AT7N60S, AF7N60S, AK7N60S, AG7N60S, AU8N60S, AD8N60S, 20N50, AF8N60S, AK8N60S, AG8N60S, 100N10NF, 10N50TF, 11N65GS, 11N65TFS, 12N60B

Keywords - AT8N60S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs