AG8N60S MOSFET. Datasheet pdf. Equivalent

   Type Designator: AG8N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   Rise Time (tr): 60.5 nS
   Drain-Source Capacitance (Cd): 105 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
   Package: TO-263AB

AG8N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search