AG8N60S PDF and Equivalents Search

 

AG8N60S Specs and Replacement

Type Designator: AG8N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263AB

AG8N60S substitution

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AG8N60S datasheet

 ..1. Size:1959K  anbon
 au8n60s ad8n60s at8n60s af8n60s ak8n60s ag8n60s.pdf pdf_icon

AG8N60S

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Detailed specifications: AF7N60S , AK7N60S , AG7N60S , AU8N60S , AD8N60S , AT8N60S , AF8N60S , AK8N60S , STF13NM60N , 100N10NF , 10N50TF , 11N65GS , 11N65TFS , 12N60B , 12N60H , 12N65 , 12N65F .

History: IXFK120N20

Keywords - AG8N60S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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