18N50MF Specs and Replacement
Type Designator: 18N50MF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220F
18N50MF substitution
- MOSFET ⓘ Cross-Reference Search
18N50MF datasheet
18n50mf.pdf
18N50MF 18 Amps,500 Volts N-CHANNEL MOSFET FEATURE TO-220MF 18A,500V,R =0.35 @V =10V/9A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 18N50MF Drain-Source Voltage V 500 DSS V Gate-Source Voltage V 30 GSS Continu... See More ⇒
tsf18n50mr.pdf
TSF18N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18.0A,500V,Max.RDS(on)=0.32 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with... See More ⇒
tsa18n50mr.pdf
TSA18N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18.0A,500V,Max.RDS(on)=0.31 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 42nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with... See More ⇒
gpt18n50g gpt18n50dg.pdf
GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D ... See More ⇒
fqp18n50v2 fqpf18n50v2.pdf
QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Lo... See More ⇒
mtu18n50erev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's Data Sheet MTU18N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time... See More ⇒
mtu18n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's Data Sheet MTU18N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time... See More ⇒
irfb18n50k.pdf
PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized ... See More ⇒
irfbl18n50k.pdf
PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.25 18A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo... See More ⇒
irfb18n50kpbf.pdf
SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ... See More ⇒
fdp18n50 fdpf18n50 fdpf18n50t.pdf
November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to Low... See More ⇒
fdp18n50 fdpf18n50.pdf
April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially ... See More ⇒
fqh18n50v2.pdf
QFET FQH18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F... See More ⇒
fda18n50.pdf
October 2006 TM UniFET FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒
fqpf18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor... See More ⇒
fqa18n50v2.pdf
TM QFET FQA18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F... See More ⇒
fqp18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor... See More ⇒
irfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒
sihp18n50c.pdf
SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipations Capabilit... See More ⇒
sihf18n50c.pdf
SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipati... See More ⇒
sihf18n50d.pdf
SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)... See More ⇒
irfb18n50k sihfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒
ixz4df18n50.pdf
IXZ4DF18N50 RF Power MOSFET & DRIVER 500 Volts Driver / MOSFET Combination 19 A DEIC-515 Driver combined with IXZ318N50 MOSFET 0.29 Ohms Gate driver matched to MOSFET Features Isolated substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low Rds(ON) ... See More ⇒
ixz318n50.pdf
IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25 C to 150 C VDSS 500 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR... See More ⇒
ixzr18n50a ixzr18n50b.pdf
IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V PDC = 350 W TJ = 25 C to 150 C; RGS ... See More ⇒
fdp18n50 fdpf18n50 fdpf18n50t.pdf
FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A Description Low Gate Charge (Typ. 45 nC) UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF) This MOSFET is tailored to reduce on-state resistance, and to... See More ⇒
fdp18n50 fdpf18n50.pdf
October 2006 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially... See More ⇒
fda18n50.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
18n50.pdf
UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1 TO-230 TO-220F1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum... See More ⇒
ap18n50w.pdf
AP18N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf
N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
mp18n50eif mp18n50eic.pdf
N N- CHANNEL MOSFET R MP18N50EI MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 67.8nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
18n50a.pdf
GOFORD 18N50A Description Features VDSS RDS(ON) ID @ 10V (typ) 18A 500V 0.22 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units ... See More ⇒
sdf18n50 sdp18n50.pdf
SDP18N50 SDF18N50 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 500V 18A 0.25 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒
ssf18n50f.pdf
SSF18N50F Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating... See More ⇒
cm18n50p.pdf
R C1N0 M85P www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 3 3 ... See More ⇒
18n50.pdf
18N50 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.24 2 Features Fast switching ESD imp... See More ⇒
18n50d.pdf
18N50D 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.24 2 Features Fast switching ESD im... See More ⇒
f18n50.pdf
F18N50 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) ... See More ⇒
svf18n50f svf18n50t svf18n50pn svf18n50fj.pdf
SVF18N50F/T/PN/FJ 18A 500V N SVF18N50F/T/PN/FJ N MOS F-CellTM VDMOS ... See More ⇒
mdf18n50.pdf
MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GS MDF18N50 is suitable device for SMPS, high speed switching Applications and general ... See More ⇒
mdf18n50bth mdp18n50bth.pdf
MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general... See More ⇒
mdp18n50th.pdf
MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachip s I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R ... See More ⇒
mdq18n50gth mdq18n50gtp.pdf
MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DS These N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are s... See More ⇒
ms18n50.pdf
MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic... See More ⇒
msf18n50.pdf
MSF18N50 500V N-Channel MOSFET Description The MSF18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. he TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins... See More ⇒
wff18n50.pdf
WFF18N50 WFF18N50 WFF18N50 WFF18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒
wfw18n50.pdf
WFW18N50 WFW18N50 WFW18N50 WFW18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description These N-Channel enhancement... See More ⇒
wfw18n50n.pdf
WFW18N50N WFW18N50N WFW18N50N WFW18N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod... See More ⇒
wfw18n50w.pdf
WFW18N50W WFW18N50W WFW18N50W WFW18N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod... See More ⇒
wfp18n50.pdf
WFP18N50 WFP18N50 WFP18N50 WFP18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒
fhf18n50a.pdf
N N-CHANNEL MOSFET FHF18N50A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d... See More ⇒
fhf18n50c.pdf
N N-CHANNEL MOSFET FHF18N50C MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d... See More ⇒
hy18n50w.pdf
SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A 500V, RDS(ON)=0.32W@VGS=10V, ID=9A N-Channel Enhancement Mode MOSFET Features TO-3PN Low On-State Resistance Fast Switching Low Gate Charge & Low CR... See More ⇒
jfpc18n50c jffm18n50c.pdf
JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf... See More ⇒
jfam18n50c.pdf
JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and ... See More ⇒
kia18n50h.pdf
18A 500V 18N50H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction. 2. Features R =0.25 @V =10V DS(on) GS Lowgate c... See More ⇒
slw18n50c.pdf
SLW18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced planar - 18A, 500V, RDS(on)typ = 212m stripe DMOS technology. This advanced technology has been - Low gate charge especially tailored to minimize conduction loss, provide superior - Low Crss - Fast switching switching performance, and withstand high energy pulse in... See More ⇒
slp18n50c slf18n50c.pdf
SLP18N50C / SLF18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒
swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS 500V Features ID 18A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General ... See More ⇒
sw18n50d swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS 500V Features ID 18A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General D... See More ⇒
hfs18n50u.pdf
Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50U ID = 18 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area L... See More ⇒
hfs18n50ut.pdf
June 2020 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50UT ID = 18 A 500V N-Channel MOSFET TO-220FT FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒
hfp18n50u.pdf
Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFP18N50U ID = 18 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Low... See More ⇒
hfh18n50s.pdf
Nov 2009 BVDSS = 500 V RDS(on) typ = 0.220 HFH18N50S ID = 19 A 500V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
sl18n50f.pdf
SL18N50F N-Channel Power MOSFET Features 18.0A, 500V, R =0.25 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherwi... See More ⇒
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf
WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S ... See More ⇒
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf
WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50C WMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C... See More ⇒
cs18n50f cs18n50p cs18n50v cs18n50w.pdf
CS18N50F,CS18N50P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS18N50V,CS18N50W 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F ... See More ⇒
cs18n50f cs18n50p cs18n50v.pdf
nvert CS18N50F,CS18N50P,CS18N50V Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F TO-220F CS1... See More ⇒
fir18n50fg.pdf
FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b... See More ⇒
jmpc18n50bj.pdf
JMPC18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON) ... See More ⇒
jmpf18n50bj.pdf
JMPF18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON) ... See More ⇒
lnc18n50 lnd18n50.pdf
LNC18N50/LND18N50 Lonten N-channel 500V, 18A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 18A D resulting device has low conduction resistance, R 0.28 DS(on),max superior switching performance and high avalanche Q 50.5 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q =5... See More ⇒
spc18n50g.pdf
SPC18N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=18A(Vgs=10V) R max. at 25oC ( ) V =10V 0.30 DS(on) GS Ultra Low Gate Charge Q max. (nC) 88 g Improved dv/dt Capability Q (nC) 21 gs 100% Avalanche Tested Q (nC) 28 gd ROHS compliant Configuration single Ap... See More ⇒
smirf18n50.pdf
SMIRF18N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35 (VGS=10V, ID=9A) on-state resistance, provide superior... See More ⇒
vbzmb18n50.pdf
VBZMB18N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 550V FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.26 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration ... See More ⇒
hm18n50a hm18n50f.pdf
HM18N50A / HM18N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒
fxn18n50f.pdf
FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.A General Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 18A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind... See More ⇒
mdf18n50th.pdf
isc N-Channel MOSFET Transistor MDF18N50TH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
mdp18n50bth.pdf
isc N-Channel MOSFET Transistor MDP18N50BTH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
mdq18n50gtp.pdf
isc N-Channel MOSFET Transistor MDQ18N50GTP FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
mdf18n50bth.pdf
isc N-Channel MOSFET Transistor MDF18N50BTH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
mdp18n50th.pdf
isc N-Channel MOSFET Transistor MDP18N50TH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 12N65 , 12N65F , 12N65B , 12N65H , 12N65TF , 13N50MF , 150N06Y , 16N65MF , IRF9640 , 20N65NF , 25N06G , 47N60YS , 4N60B , 4N60H , 4N65F , 4N65B , 4N65H .
Keywords - 18N50MF MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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