All MOSFET. 4N60H Datasheet

 

4N60H MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N60H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO262

 4N60H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N60H Datasheet (PDF)

 ..1. Size:934K  chongqing pingwei
 4n60 4n60f 4n60b 4n60h 4n60g 4n60d.pdf

4N60H 4N60H

 0.1. Size:55K  ape
 ap04n60h-h-hf.pdf

4N60H 4N60H

AP04N60H-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.8 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.2. Size:198K  ape
 aps04n60h.pdf

4N60H 4N60H

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

 0.3. Size:55K  ape
 ap04n60h-hf.pdf

4N60H 4N60H

AP04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conve

 0.4. Size:57K  ape
 aps04n60h-hf.pdf

4N60H 4N60H

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.5. Size:316K  kia
 kia4n60h.pdf

4N60H 4N60H

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate cha

 0.6. Size:543K  cn wuxi unigroup
 tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf

4N60H 4N60H

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE65N760F

 

 
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