7N60DS PDF and Equivalents Search

 ..1. Size:540K  chongqing pingwei
 7n60gs 7n60ds.pdf

7N60(G,D)S 7 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE 7A,600V,R =0.58 @V =10V/3.5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Integrated ESD protection diode TO-252 TO-251 7N60GS 7N60DS Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 7N60... See More ⇒

 9.1. Size:910K  st
 stb37n60dm2ag.pdf

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TAB STB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa... See More ⇒

 9.2. Size:699K  st
 stw37n60dm2ag.pdf

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capac... See More ⇒

 9.3. Size:219K  vishay
 sihp17n60d.pdf

SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS... See More ⇒

 9.4. Size:187K  vishay
 sihg17n60d.pdf

SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS... See More ⇒

 9.5. Size:348K  sisemi
 sif7n60d.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N60D N- MOS / N-CHANNEL POWER MOSFET SIF7N60D N... See More ⇒

 9.6. Size:512K  silan
 svf7n60f svf7n60s svf7n60d.pdf

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 9.7. Size:638K  silan
 svs7n60fjd2 svs7n60dd2tr svs7n60fd2.pdf

SVS7N60F(FJ)(D)D2 7A, 600V DP MOS SVS7N60F(FJ)(D)D2 N MOSFET DP MOS SVS7N60F(FJ)(D)D2 / 7A,600... See More ⇒

 9.8. Size:999K  samwin
 sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 3 TV... See More ⇒

 9.9. Size:1026K  samwin
 swf7n60d swp7n60d swi7n60d swd7n60d.pdf

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 ... See More ⇒

 9.10. Size:777K  convert
 csfr7n60f csfr7n60k csfr7n60d csfr7n60u.pdf

CSFR7N60F, CSFR7N60K, nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR7N60D,CSFR7N60U 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 9.11. Size:1036K  lonten
 lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf

LNC7N60D LND7N60D LNG7N60D LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha... See More ⇒