7N60DS MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N60DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 6.2 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO251
7N60DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N60DS Datasheet (PDF)
7n60gs 7n60ds.pdf
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7N60(G,D)S7 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURE 7A,600V,R =0.58@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability Integrated ESD protection diodeTO-252 TO-2517N60GS 7N60DSAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60
stb37n60dm2ag.pdf
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STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TABSTB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa
stw37n60dm2ag.pdf
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STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac
sihp17n60d.pdf
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SiHP17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS
sihg17n60d.pdf
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SiHG17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS
sif7n60d.pdf
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN
svf7n60f svf7n60s svf7n60d.pdf
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SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC
svs7n60fjd2 svs7n60dd2tr svs7n60fd2.pdf
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SVS7N60F(FJ)(D)D2 7A, 600V DP MOS SVS7N60F(FJ)(D)D2 N MOSFET DP MOS SVS7N60F(FJ)(D)D2 / 7A,600
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf
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SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3 3 TV
swf7n60d swp7n60d swi7n60d swd7n60d.pdf
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SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3
csfr7n60f csfr7n60k csfr7n60d csfr7n60u.pdf
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CSFR7N60F, CSFR7N60K, nvertSuzhou Convert Semiconductor Co ., Ltd.CSFR7N60D,CSFR7N60U600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package
lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf
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LNC7N60D\LND7N60D\LNG7N60D\LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP60WN4K9J