SSF6N70A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF6N70A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 51
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO3PF
SSF6N70A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF6N70A
Datasheet (PDF)
7.1. Size:411K silikron
ssf6n70gm.pdf 
SSF6N70GM Main Product Characteristics: VDSS 700V RDS(on) 1.49 (typ.) ID 6A IPAKM-S2 Marking and p in S che ma ti c di ag ra m (Details in page6) Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and
7.2. Size:451K silikron
ssf6n70g.pdf
SSF6N70G Main Product Characteristics: VDSS 700V RDS(on) 1.49 (typ.) ID 6A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.1. Size:263K 1
ssf6n80a.pdf
SSF6N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
9.3. Size:532K silikron
ssf6n80f.pdf
SSF6N80F Main Product Characteristics: VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco
9.4. Size:423K silikron
ssf6n80a6.pdf
SSF6N80A6 Main Product Characteristics: VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking and p in TO-262 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.5. Size:443K silikron
ssf6n60g.pdf
SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.6. Size:407K silikron
ssf6ns70ugx.pdf
SSF6NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 1.08 (typ.) ID 6A IPAK-NX Marking and Pi n Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UGX series MOSFETs is a new technology, whi
9.7. Size:457K silikron
ssf6ns70ug.pdf
SSF6NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UG series MOSFETs is a new technology,
9.8. Size:478K silikron
ssf6n80g.pdf
SSF6N80G Main Product Characteristics: VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
9.9. Size:453K silikron
ssf6ns65uf.pdf
SSF6NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.78 (typ.) ID 6A Marking and pin TO-220F Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS65UF series MOSFETs is a new technology, whic
9.10. Size:555K silikron
ssf6n40d.pdf
SSF6N40D Main Product Characteristics: VDSS 400V RDS(on) 0.85 (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
9.11. Size:465K silikron
ssf6ns70ud.pdf
SSF6NS70UD Main Product Characteristics: VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UD series MOSFETs is a new technology,
9.12. Size:450K silikron
ssf6ns70ugs.pdf
SSF6NS70UGS Main Product Characteristics: VDSS 700V RDS(on) 1.1 (typ.) ID 6A TO-251S Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UGS series MOSFETs is a new technology, whic
9.13. Size:543K silikron
ssf6ns70g-d-f.pdf
SSF6NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.2 (typ.) ID 5.2A 251 TO-252 TO- TO-220F Schematic diagram SSF6NS70G SSF6NS70D SSF6NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70G/D/F
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