DM10N65C PDF and Equivalents Search

 

DM10N65C Specs and Replacement

Type Designator: DM10N65C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

DM10N65C substitution

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DM10N65C datasheet

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DM10N65C

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Detailed specifications: DM4N65E, DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F, 7N65, DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V

Keywords - DM10N65C MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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