DM12N65C-F Specs and Replacement
Type Designator: DM12N65C-F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
DM12N65C-F substitution
- MOSFET ⓘ Cross-Reference Search
DM12N65C-F datasheet
Detailed specifications: DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F, DM10N65C, DM10N65C-F, DM10N65C-2, DM12N65C, AON7408, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G
Keywords - DM12N65C-F MOSFET specs
DM12N65C-F cross reference
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DM12N65C-F replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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