EMB09N03V Specs and Replacement
Type Designator: EMB09N03V
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 196 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: EDFN3X3
EMB09N03V substitution
- MOSFET ⓘ Cross-Reference Search
EMB09N03V datasheet
Detailed specifications: DM8N65C-F, DM10N65C, DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, 2N7002, EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G
Keywords - EMB09N03V MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MEM2301 | ELM34608AA
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