EMB17A03G MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

EMB17A03G Specs and Replacement

Type Designator: EMB17A03G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

EMB17A03G substitution

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EMB17A03G datasheet

..1. Size:191K emc
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EMB17A03G Dual N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary BVDSS 30V RDSON (MAX.) 17m ID 10A UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20 V... See More ⇒

9.1. Size:64K nxp
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PEMB17; PUMB17 PNP/PNP resistor-equipped transistors; R1 = 47 k , R2 = 22 k Rev. 03 1 September 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP JEITA PEMB17 SOT666 - PEMD17 PEMH17 PUMB17 SOT363 SC-88 PUMD17 PUMH17 1.2 Features B... See More ⇒

9.2. Size:215K emc
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EMB17C03G N & P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary N CH P CH BVDSS 30V 30V RDSON (MAX.) 17m 20m ID 10A 8A UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UN... See More ⇒

Detailed specifications: DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, K3569, EMB17C03G, EMB20N03V, EMB20P03G, EMB22A04G, EMBA5P06J, EMF02P02H, EMF03N02HR, EMF20A02G