All MOSFET. EMB17A03G Datasheet

 

EMB17A03G Datasheet and Replacement


   Type Designator: EMB17A03G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
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EMB17A03G Datasheet (PDF)

 ..1. Size:191K  emc
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EMB17A03G

EMB17A03GDualNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS30VRDSON(MAX.)17mID10AUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20V

 9.1. Size:64K  nxp
 pemb17 pumb17.pdf pdf_icon

EMB17A03G

PEMB17; PUMB17PNP/PNP resistor-equipped transistors;R1 = 47 k, R2 = 22 kRev. 03 1 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB17 SOT666 - PEMD17 PEMH17PUMB17 SOT363 SC-88 PUMD17 PUMH171.2 Features B

 9.2. Size:215K  emc
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EMB17A03G

EMB17C03GN&PChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:NCHPCHBVDSS30V30VRDSON(MAX.)17m20mID10A8AUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUN

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | TK7P65W | ALD1103DB | SQ9407EY-T1 | SFFX054Z

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