All MOSFET. EMB20P03G Datasheet

 

EMB20P03G Datasheet and Replacement


   Type Designator: EMB20P03G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
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EMB20P03G Datasheet (PDF)

 ..1. Size:181K  emc
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EMB20P03G

EMB20P03GPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID10AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS

 6.1. Size:191K  china
 emb20p03v.pdf pdf_icon

EMB20P03G

EMB20P03VPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID18AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS

 6.2. Size:191K  emc
 emb20p03v.pdf pdf_icon

EMB20P03G

EMB20P03VPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID18AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS

 9.1. Size:204K  1
 emb20n03v.pdf pdf_icon

EMB20P03G

EMB20N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID12AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

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History: MCH3484 | DMN30H4D0L

Keywords - EMB20P03G MOSFET datasheet

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