C2M090W035 Specs and Replacement
Type Designator: C2M090W035
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO-247
C2M090W035 substitution
- MOSFET ⓘ Cross-Reference Search
C2M090W035 datasheet
c2m090w035.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. C2M090W035 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒
c2m090w070.pdf
nvert C2M090W070 Suzhou Convert Semiconductor Co ., Ltd. 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒
c2m090bg070.pdf
nvert C2M090BG070 Suzhou Convert Semiconductor Co ., Ltd. 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Supp... See More ⇒
Detailed specifications: MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8, C2M065W030, C2M065W060, C2M065W200, C2M090BG070, IRLB3034, C2M090W070, C2M120W040, C2M120W080, C2M120W280, CS10N60P, CS1060K, CS10N65F, CS10N65P
Keywords - C2M090W035 MOSFET specs
C2M090W035 cross reference
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