All MOSFET. SSF80N06A Datasheet

 

SSF80N06A Datasheet and Replacement


   Type Designator: SSF80N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 76 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 153 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO3PF
 

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SSF80N06A Datasheet (PDF)

 ..1. Size:287K  1
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SSF80N06A

 9.1. Size:431K  silikron
 ssf80100.pdf pdf_icon

SSF80N06A

SSF80100Main Product Characteristics: VDSS 75V RDS(on) 8m(typ.) ID 80A TO220Schematic diagramMarking and pin AssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for motor control, PWM, load switching etc. Ultra low on-resistance with low gate charge Excellent Qgd/Qgs rating Fast switching and rever

 9.2. Size:1022K  cn super semi
 ssf80r240sfd ssp80r240sfd.pdf pdf_icon

SSF80N06A

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen- With Fast-RecoverySS*80R240SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSF80R240SFD/SSP80R240SFD800V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-E

 9.3. Size:1181K  cn super semi
 ssf80r500s ssp80r500s ssb80r500s sst80r500s.pdf pdf_icon

SSF80N06A

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R500SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R500S/SSP80R500S/SSB80R500S/SST80R500S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET 850V @

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