C2M120W280 MOSFET. Datasheet pdf. Equivalent
Type Designator: C2M120W280
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6(typ) V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO-247
C2M120W280 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C2M120W280 Datasheet (PDF)
c2m120w280.pdf
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nvertC2M120W280Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
c2m120w080.pdf
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nvertC2M120W080Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel MOSFETAPPLICATIONSFEATURES Switch Mode Power Supply (SMPS) Low On-Resistance Power Factor Correction (PFC) Low Capacitance Uninterruptible Power Supply (UPS) Avalanche Ruggedness EV Charging station & Motor Drives Halogen Free, RoHS Compliant Solar/ Wind Renewable Energy
c2m120w040.pdf
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nvertC2M120W040Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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