CS10N65P
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS10N65P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 138
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO-220
CS10N65P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS10N65P
Datasheet (PDF)
..1. Size:706K convert
cs10n65f cs10n65p cs10n65k.pdf 
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1
7.1. Size:830K jilin sino
jcs10n65f.pdf
R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
7.2. Size:1484K jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf
N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE
7.3. Size:536K jilin sino
ajcs10n65ct.pdf
N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching
7.4. Size:741K jilin sino
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf
N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
7.5. Size:356K crhj
cs10n65 a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
7.6. Size:273K crhj
cs10n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.7. Size:351K crhj
cs10n65f a9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
7.8. Size:267K crhj
cs10n65 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.9. Size:227K wuxi china
cs10n65fa9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
7.10. Size:356K wuxi china
cs10n65a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
7.11. Size:273K wuxi china
cs10n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.12. Size:401K convert
cs10n65ff.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65FF TO-220F CS10N65FFAbsolute
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