2N4392 Datasheet and Replacement

2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 4 to 10 30 5 4 2N/PN/SST4392 2 to 5 60 5 4 2N/PN/SST4393 0.5 to 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 4391

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2N4392 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS SWITCHING APPLICATIONS TO 18 METAL PACKAGE Underside View PIN 1 Source PIN 2

N-Channel JFET Switch CORPORATION 2N4391 2N4393 / PN4391 PN4393 / SST4391 SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A r

A A A A

2N4393DCSM SEME LAB SMALL SIGNAL DUAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 HERMETIC CERAMIC SURFACE MOUNT 1 4 A PACKAGE 0.23 6 5 rad. (0.009) CECC SC

2N4391 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS SWITCHING APPLICATIONS TO 18 METAL PACKAGE Underside View PIN 1 Source PIN 2

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25 C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5302 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2N4395 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2N4396 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o