CS11N65P Datasheet and Replacement
Type Designator: CS11N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 46 nC
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 147 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220
CS11N65P substitution
CS11N65P Datasheet (PDF)
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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