All MOSFET. CS16N60P Datasheet

 

CS16N60P MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS16N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220

 CS16N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS16N60P Datasheet (PDF)

 ..1. Size:776K  convert
 cs16n60f cs16n60p.pdf

CS16N60P CS16N60P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 7.1. Size:426K  crhj
 cs16n60 a8h.pdf

CS16N60P CS16N60P

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:306K  crhj
 cs16n60f a9h.pdf

CS16N60P CS16N60P

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.3. Size:426K  wuxi china
 cs16n60a8h.pdf

CS16N60P CS16N60P

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NUS3116MT

 

 
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