CS16N65P MOSFET Datasheet: N-Ch, 650V, 16A. Full specification with pinout and replacement list

CS16N65P Specs and Replacement

   Type Designator: CS16N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 196 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220

CS16N65P substitution

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CS16N65P datasheet

..1. Size:511K convert
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nvert CS16N65F,CS16N65P,CS16N65W Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS1... See More ⇒

7.1. Size:307K wuxi china
cs16n65fa9h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

7.2. Size:625K convert
cs16n65f.pdf pdf_icon

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS16N65F Absolute Max... See More ⇒

8.1. Size:426K crhj
cs16n60 a8h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒