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CS16N65P Spec and Replacement


   Type Designator: CS16N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 196 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220

 CS16N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS16N65P Specs

 ..1. Size:511K  convert
cs16n65f cs16n65p cs16n65w.pdf pdf_icon

CS16N65P

nvert CS16N65F,CS16N65P,CS16N65W Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS1... See More ⇒

 7.1. Size:307K  wuxi china
cs16n65fa9h.pdf pdf_icon

CS16N65P

Silicon N-Channel Power MOSFET R CS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.2. Size:625K  convert
cs16n65f.pdf pdf_icon

CS16N65P

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS16N65F Absolute Max... See More ⇒

 8.1. Size:426K  crhj
cs16n60 a8h.pdf pdf_icon

CS16N65P

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

Detailed specifications: CS13N65F , CS14N80V , CS15N50F , CS15N50P , CS15N70F , CS16N60F , CS16N60P , CS16N65F , 8205A , CS16N65W , CS18N20BF , CS18N20BP , CS18N20BB , CS18N50F , CS18N50P , CS18N50V , CS18N50W .

Keywords - CS16N65P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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