CS18N50W MOSFET Datasheet: N-Ch, 500V, 18A. Full specification with pinout and replacement list

CS18N50W Specs and Replacement

Type Designator: CS18N50W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.5 nS

Cossⓘ - Output Capacitance: 228 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: TO-247

CS18N50W substitution

- MOSFET ⓘ Cross-Reference Search

CS18N50W datasheet

..1. Size:630K convert
cs18n50f cs18n50p cs18n50v cs18n50w.pdf pdf_icon

CS18N50F,CS18N50P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS18N50V,CS18N50W 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F ... See More ⇒

0.1. Size:948K jilin sino
jcs18n50wh.pdf pdf_icon

... See More ⇒

0.2. Size:1269K jilin sino
jcs18n50we jcs18n50abe.pdf pdf_icon

N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

7.1. Size:1873K jilin sino
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf pdf_icon

N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒