All MOSFET. SSH10N60A Datasheet

 

SSH10N60A Datasheet and Replacement


   Type Designator: SSH10N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 193 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 74 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3P
 

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SSH10N60A Datasheet (PDF)

 ..1. Size:923K  samsung
 ssh10n60a.pdf pdf_icon

SSH10N60A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 8.1. Size:256K  1
 ssh10n80a.pdf pdf_icon

SSH10N60A

N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT

 8.2. Size:294K  samsung
 ssh10n70 ssh10n80.pdf pdf_icon

SSH10N60A

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 8.3. Size:211K  samsung
 ssh10n80a.pdf pdf_icon

SSH10N60A

SSH10N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

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