CS2N65D Datasheet PDF and Equivalents Search

 ..1. Size:702K  convert
 cs2n65f cs2n65d cs2n65u.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N65F,CS2N65D,CS2N65U 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N65F TO-220F CS2N65F... See More ⇒

 8.1. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf

N R N-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson Vgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

 8.2. Size:1571K  jilin sino
 jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf

N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

 8.3. Size:1161K  jilin sino
 jcs2n65e.pdf

N R N-CHANNEL MOSFET JCS2N65E Package MAIN CHARACTERISTICS ID 2A VDSS 650V Rdson-max 5.5 Vgs=10V Qg-Typ 6.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED p... See More ⇒

 8.4. Size:990K  jilin sino
 jcs2n65fc.pdf

N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

 8.5. Size:857K  blue-rocket-elect
 brcs2n65aa.pdf

BRCS2N65AA Rev.A Sep.-2018 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie... See More ⇒

 8.6. Size:747K  blue-rocket-elect
 brcs2n65qf.pdf

BRCS2N65QF Rev.A Sep.-2022 DATA SHEET / Descriptions TO-126F N MOS N-CHANNEL MOSFET in a TO-126F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high eff... See More ⇒

 8.7. Size:687K  blue-rocket-elect
 brcs2n65ip.pdf

BRCS2N65IP Rev.A Apr.-2018 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie... See More ⇒

 8.8. Size:235K  crhj
 cs2n65 a3.pdf

Silicon N-Channel Power MOSFET R CS2N65 A3 General Description VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

 8.9. Size:545K  crhj
 cs2n65 a4hy.pdf

Silicon N-Channel Power MOSFET R CS2N65 A4HY General Description VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.10. Size:242K  crhj
 cs2n65 a3hy.pdf

Silicon N-Channel Power MOSFET R CS2N65 A3HY General Description VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.11. Size:733K  crhj
 cs2n65f a9hy.pdf

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 8.12. Size:236K  wuxi china
 cs2n65a4.pdf

Silicon N-Channel Power MOSFET R CS2N65 A4 General Description VDSS 650 V CS2N65 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.9 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.13. Size:242K  wuxi china
 cs2n65a3hy.pdf

Silicon N-Channel Power MOSFET R CS2N65 A3HY General Description VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.14. Size:733K  wuxi china
 cs2n65fa9hy.pdf

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 8.15. Size:613K  wuxi china
 cs2n65fa9.pdf

Silicon N-Channel Power MOSFET R CS2N65F A9 General Description VDSS 650 V CS2N65F A9, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 8.16. Size:235K  wuxi china
 cs2n65a3.pdf

Silicon N-Channel Power MOSFET R CS2N65 A3 General Description VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

 8.17. Size:543K  wuxi china
 cs2n65a4hy.pdf

Silicon N-Channel Power MOSFET R CS2N65 A4HY General Description VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒