CS2N70HU Datasheet and Replacement
Type Designator: CS2N70HU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 7.9
nS
Cossⓘ -
Output Capacitance: 35.2
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8
Ohm
Package:
TO-251
- MOSFET Cross-Reference Search
CS2N70HU Datasheet (PDF)
..1. Size:455K convert
cs2n70hf cs2n70hp cs2n70hu cs2n70hd.pdf 
CS2N70HF, CS2N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N70HU, CS2N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N70H
8.1. Size:1933K jilin sino
jcs2n70v jcs2n70r 2n70nl.pdf
N RN-CHANNEL MOSFET JCS2N70C Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 10.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge U
8.2. Size:2231K jilin sino
jcs2n70mfh jcs2n70vh jcs2n70rh jcs2n70ch jcs2n70fh.pdf
N RN-CHANNEL MOSFET JCS2N70H Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 8.0nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP
8.3. Size:246K crhj
cs2n70f a9.pdf
Silicon N-Channel Power MOSFET R CS2N70F A9 General Description VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.4. Size:249K crhj
cs2n70 a3r.pdf
Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.5. Size:189K crhj
cs2n70 a3r1-g.pdf
Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
8.6. Size:235K crhj
cs2n70 a6.pdf
Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.7. Size:248K crhj
cs2n70 a4.pdf
Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.8. Size:234K wuxi china
cs2n70a6.pdf
Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.9. Size:247K wuxi china
cs2n70a4.pdf
Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.10. Size:246K wuxi china
cs2n70a3r1-g.pdf
Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
8.11. Size:248K wuxi china
cs2n70a3r.pdf
Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.12. Size:245K wuxi china
cs2n70fa9.pdf
Silicon N-Channel Power MOSFET R CS2N70F A9 General Description VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
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