CS3N50DP MOSFET Datasheet: N-Ch, 500V, 3A. Full specification with pinout and replacement list

CS3N50DP Specs and Replacement

   Type Designator: CS3N50DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220

CS3N50DP substitution

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CS3N50DP datasheet

..1. Size:447K convert
cs3n50df cs3n50dp cs3n50dd cs3n50du.pdf pdf_icon

CS3N50DF, CS3N50DP, nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N50DD,CS3N50DU 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N50DF... See More ⇒

8.1. Size:250K crhj
cs3n50 b4hy.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

8.2. Size:230K crhj
cs3n50 b4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

8.3. Size:196K crhj
cs3n50 b3.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N50 B3 General Description VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒