CS3N50DP Datasheet. Specs and Replacement

Type Designator: CS3N50DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-220

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CS3N50DP datasheet

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CS3N50DP

CS3N50DF, CS3N50DP, nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N50DD,CS3N50DU 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N50DF... See More ⇒

 8.1. Size:250K  crhj
 cs3n50 b4hy.pdf pdf_icon

CS3N50DP

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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CS3N50DP

Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

 8.3. Size:196K  crhj
 cs3n50 b3.pdf pdf_icon

CS3N50DP

Silicon N-Channel Power MOSFET R CS3N50 B3 General Description VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒

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Detailed specifications: CS30N10U, CS30N10D, CS3N100F, CS3N100P, CS3N150F, CS3N150W, CS3N150VF, CS3N50DF, MMIS60R580P, CS3N50DD, CS3N50DU, CS3N65F, CS3N65P, CS3N65U, CS3N65D, CS3N65LF, 3N65LU

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