CS4N100V MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N100V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
Package: TO-3P
CS4N100V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N100V Datasheet (PDF)
cs4n100f cs4n100v cs4n100vf.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N100F,CS4N100V,CS4N100VF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N100F TO-220F C
brcs4n10ta.pdf
BRCS4N10TA Rev.A Jun.-2021 DATA SHEET / Descriptions SOT-89 N MOS N- CHANNEL MOSFET in a SOT-89 Plastic Package. / Features VDS (V) = 100V ID = 4A (VGS = 10V) RDS(ON)
bcs4n10.pdf
BCS4N10 PD TC=25 14 W ID TC=25 4 A VGS 20 V Tjm +150 Tstg -55 +155 BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3.8A 0.55 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=15V,IDS=3.8A(N)IDS=4.1A(P) 1.2 S IDSS VDS=
cs4n150v cs4n150w cs4n150vf.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS4N150V,CS4N150W,CS4N150VF1500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N150V TO-3P CS4N
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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