CS4N150VF
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N150VF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
trⓘ - Rise Time: 42.5
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
TO-3PF
CS4N150VF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N150VF
Datasheet (PDF)
..1. Size:1096K convert
cs4n150v cs4n150w cs4n150vf.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS4N150V,CS4N150W,CS4N150VF1500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N150V TO-3P CS4N
9.1. Size:1047K blue-rocket-elect
brcs4n10ta.pdf
BRCS4N10TA Rev.A Jun.-2021 DATA SHEET / Descriptions SOT-89 N MOS N- CHANNEL MOSFET in a SOT-89 Plastic Package. / Features VDS (V) = 100V ID = 4A (VGS = 10V) RDS(ON)
9.2. Size:109K china
bcs4n10.pdf
BCS4N10 PD TC=25 14 W ID TC=25 4 A VGS 20 V Tjm +150 Tstg -55 +155 BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3.8A 0.55 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=15V,IDS=3.8A(N)IDS=4.1A(P) 1.2 S IDSS VDS=
9.3. Size:525K convert
cs4n100f cs4n100v cs4n100vf.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N100F,CS4N100V,CS4N100VF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N100F TO-220F C
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