All MOSFET. CS4N80F Datasheet

 

CS4N80F MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS4N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO-220F

 CS4N80F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N80F Datasheet (PDF)

 ..1. Size:702K  convert
 cs4n80f cs4n80p cs4n80u cs4n80d.pdf

CS4N80F CS4N80F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N80F, CS4N80P,CS4N80U,CS4N80D800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N80F TO-220

 0.1. Size:1321K  jilin sino
 jcs4n80ch jcs4n80fh.pdf

CS4N80F CS4N80F

N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

 0.2. Size:3308K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf

CS4N80F CS4N80F

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 0.3. Size:1170K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf

CS4N80F CS4N80F

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 0.4. Size:1385K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80s jcs4n80b.pdf

CS4N80F CS4N80F

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 0.5. Size:380K  wuxi china
 cs4n80fa9hd.pdf

CS4N80F CS4N80F

Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SCG3019

 

 
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