CS5N65P Specs and Replacement
Type Designator: CS5N65P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ -
Output Capacitance: 61 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
CS5N65P datasheet
..1. Size:441K convert
cs5n65f cs5n65p cs5n65u cs5n65d.pdf 
nvert Suzhou Convert Semiconductor Co ., Ltd. CS5N65F, CS5N65P, CS5N65U, CS5N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS5N65F TO-2... See More ⇒
8.2. Size:424K crhj
cs5n65 a8h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.3. Size:837K crhj
cs5n65 a4.pdf
Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
8.4. Size:829K crhj
cs5n65f a9h.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25 ) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒
8.5. Size:837K crhj
cs5n65 a3.pdf
Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒
8.6. Size:417K crhj
cs5n65 a7h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.7. Size:424K wuxi china
cs5n65a8h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.8. Size:417K wuxi china
cs5n65a7h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.9. Size:837K wuxi china
cs5n65a4.pdf
Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
8.10. Size:837K wuxi china
cs5n65a3.pdf
Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒
8.11. Size:709K wuxi china
cs5n65fa9h.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒
8.12. Size:263K wuxi china
cs5n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9R General Description VDSS 650 V CS5N65F A9R, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
Detailed specifications: CS5N100F, CS5N100P, CS5N100VF, CS5N100HF, CS5N100HP, CS5N120F, CS5N120W, CS5N65F, IRLB4132, CS5N65U, CS5N65D, CS5N70F, CS5N70P, CS5N70U, CS5N70D, CS5N80F, CS5N80P
Keywords - CS5N65P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
