CS7N60CP MOSFET. Datasheet pdf. Equivalent
Type Designator: CS7N60CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
CS7N60CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS7N60CP Datasheet (PDF)
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nvertCS7N60CF,CS7N60CP,CS7N60CU,CS7N60CDSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N60CF TO
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N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf
N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
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N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
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