All MOSFET. CS8N120W Datasheet

 

CS8N120W Datasheet and Replacement


   Type Designator: CS8N120W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-247
 

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CS8N120W Datasheet (PDF)

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CS8N120W

nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N120V,CS8N120W1200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N120V TO-3P CS8N120VCS8N

Datasheet: CS7N65CD , CS7N65F , CS7N65P , CS7N65K , CS7N70F , CS7N70U , CS7N80P , CS8N120V , P0903BDG , CS8N60P , CS8N60U , CS8N60D , CS8N65F-B , CS8N65F , CS8N65P , CS8N65D , CS8N70F .

History: HAT2140H | NP89N04PUK | BUK9J0R9-40H | SPP08P06P | KI1407DL | RFM12N10L | 2N3684

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