CS8N120W MOSFET. Datasheet pdf. Equivalent
Type Designator: CS8N120W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 265 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-247
CS8N120W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS8N120W Datasheet (PDF)
cs8n120v cs8n120w.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N120V,CS8N120W1200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N120V TO-3P CS8N120VCS8N
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