CS8N120W Specs and Replacement

Type Designator: CS8N120W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-247

CS8N120W substitution

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CS8N120W datasheet

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 cs8n120v cs8n120w.pdf pdf_icon

CS8N120W

nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N120V,CS8N120W 1200V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N120V TO-3P CS8N120V CS8N... See More ⇒

Detailed specifications: CS7N65CD, CS7N65F, CS7N65P, CS7N65K, CS7N70F, CS7N70U, CS7N80P, CS8N120V, IRF830, CS8N60P, CS8N60U, CS8N60D, CS8N65F-B, CS8N65F, CS8N65P, CS8N65D, CS8N70F

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