All MOSFET. CST1N50DLU Datasheet

 

CST1N50DLU Datasheet and Replacement


   Type Designator: CST1N50DLU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
   Package: TO-251
 

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CST1N50DLU Datasheet (PDF)

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CST1N50DLU

nvertCST1N50DLU, CST1N50DLD, CST1N50DLFSuzhou Convert Semiconductor Co ., Ltd.500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCST1N50DLU T

Datasheet: CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F , AO4407 , CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U , CST30N10D , CST30N10P , CST9N20LF , CST9N20LP .

History: KNE7306A | 2SK214 | AON6220 | AON6594 | SDF4NA100SXH | SVGQ042R8NL5V-2HSTR | IPD16CN10NG

Keywords - CST1N50DLU MOSFET datasheet

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