CST9N20LP Specs and Replacement

Type Designator: CST9N20LP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220

CST9N20LP substitution

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CST9N20LP datasheet

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CST9N20LP

CST9N20LF, CST9N20LP nvert Suzhou Convert Semiconductor Co ., Ltd. CST9N20LU CST9N20LD 200V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power (SMPS) Uninterruptible Power Supply (UPS) Device Marking and Package Information Device Package Marking CST9N20LF TO-220F CST9N20LF CST9N20LP TO-220 C... See More ⇒

Detailed specifications: CST1N50DLU, CST1N50DLD, CST1N50DLF, CST30N10F, CST30N10U, CST30N10D, CST30N10P, CST9N20LF, BS170, CTB06N005, CTP06N005, CTD02N004, CTD02N007, CTD02N4P8, CTD03N003, CTD03N005, CTD03N10P5

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