CTP06N005 Datasheet and Replacement
Type Designator: CTP06N005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 443 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
CTP06N005 substitution
CTP06N005 Datasheet (PDF)
ctb06n005 ctp06n005.pdf

nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005
ctp06n6p8.pdf

nvertCTP06N6P8Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTP06N6P8 TO-220 CTP06N6P8Absolute Maximum Ra
ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf
Datasheet: CST1N50DLF , CST30N10F , CST30N10U , CST30N10D , CST30N10P , CST9N20LF , CST9N20LP , CTB06N005 , STF13NM60N , CTD02N004 , CTD02N007 , CTD02N4P8 , CTD03N003 , CTD03N005 , CTD03N10P5 , CTD03N3P3 , CTD03N4P3 .
Keywords - CTP06N005 MOSFET datasheet
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