CTD03N005 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD03N005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 87 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 206 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-252
CTD03N005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD03N005 Datasheet (PDF)
ctd03n005.pdf
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ctd03n003.pdf
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ctd03n4p3.pdf
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ctd03n4p6.pdf
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ctd03n8p5.pdf
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ctd03n10p5.pdf
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ctd03n3p3.pdf
nvertCTD03N3P3Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
