CTD03P030
MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD03P030
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.8
nC
trⓘ - Rise Time: 20.2
nS
Cossⓘ -
Output Capacitance: 148
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TO-252
CTD03P030
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD03P030
Datasheet (PDF)
..1. Size:906K convert
ctd03p030.pdf
nvertCTD03P030Suzhou Convert Semiconductor Co ., Ltd.30V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC converter High side switch for full bridge convertDevice Marking and Package Info
8.1. Size:499K convert
ctd03p7p5.pdf
nvertCTD03P7P5Suzhou Convert Semiconductor Co ., Ltd.30V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC converter High side switch for full bridge convertDevice Marking and Package Info
9.1. Size:581K convert
ctd03n4p3.pdf
nvertCTD03N4P3Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
9.2. Size:547K convert
ctd03n4p6.pdf
nvertCTD03N4P6Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
9.3. Size:1130K convert
ctd03n8p5.pdf
nvertCTD03N8P5Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
9.4. Size:499K convert
ctd03n10p5.pdf
nvertCTD03N10P5Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
9.5. Size:538K convert
ctd03n005.pdf
nvertCTD03N005Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
9.6. Size:578K convert
ctd03n3p3.pdf
nvertCTD03N3P3Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
9.7. Size:546K convert
ctd03n003.pdf
nvertCTD03N003Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
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