CTP06N7P5 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTP06N7P5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 94 nS
Drain-Source Capacitance (Cd): 274 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: TO-220
CTP06N7P5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTP06N7P5 Datasheet (PDF)
ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf
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nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005
ctp06n6p8.pdf
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