CTP06N7P5
MOSFET. Datasheet pdf. Equivalent
Type Designator: CTP06N7P5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 95
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 94
nS
Cossⓘ -
Output Capacitance: 274
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO-220
CTP06N7P5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTP06N7P5
Datasheet (PDF)
..1. Size:823K convert
ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf
8.1. Size:661K convert
ctb06n005 ctp06n005.pdf
nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005
8.2. Size:819K convert
ctp06n6p8.pdf
nvertCTP06N6P8Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTP06N6P8 TO-220 CTP06N6P8Absolute Maximum Ra
Datasheet: WPB4002
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